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FGH50N3

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FGH50N3 Image

The FGH50N3 from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.3 V, DC Collector Current 75 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.25 to 0.25 uA. More details for FGH50N3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGH50N3
  • Manufacturer
    onsemi
  • Description
    300 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.3 V
  • DC Collector Current
    75 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    300 V
  • Power Dissipation
    463 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    SPMS
  • RoHS Compliant
    Yes

Technical Documents
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