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FGL40N120AND

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The FGL40N120AND from onsemi is a IGBT with Gate Emitter Voltage -25 to 25 V, Saturated Collector Emitter Voltage 2.6 V, DC Collector Current 40 A, DC Forward Current 40 to 240 A, Junction Temperature -55 to 150 Degree C. More details for FGL40N120AND can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGL40N120AND
  • Manufacturer
    onsemi
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -25 to 25 V
  • Saturated Collector Emitter Voltage
    2.6 V
  • DC Collector Current
    40 A
  • DC Forward Current
    40 to 240 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    500 W
  • Package
    TO-264-3
  • Package Type
    Through Hole
  • Applications
    Induction heating, UPS, Ac & DC moter control and general purpose inverters
  • RoHS Compliant
    Yes

Technical Documents
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