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FGY120T65S_F085

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The FGY120T65S_F085 from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.5 to 1.85 V, DC Collector Current 240 A, DC Forward Current 188 to 240 A, Junction Temperature -55 to 175 Degree C. More details for FGY120T65S_F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FGY120T65S_F085
  • Manufacturer
    onsemi
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.5 to 1.85 V
  • DC Collector Current
    240 A
  • DC Forward Current
    188 to 240 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    882 W
  • Package
    TO-247-3
  • Package Type
    Through Hole
  • Applications
    Traction Inverter for HEV/EV, Auxiliary DC/AC Converter, Motor Drives, Other Power-train Applications Requiring High Power Switch
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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