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HGT1S10N120BNS

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HGT1S10N120BNS Image

The HGT1S10N120BNS from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2.45 V, DC Collector Current 17 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.25 to 0.25 uA. More details for HGT1S10N120BNS can be seen below.

Product Specifications

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Product Details

  • Part Number
    HGT1S10N120BNS
  • Manufacturer
    onsemi
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2.45 V
  • DC Collector Current
    17 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    298 W
  • Package
    D2PAK-3 / TO-263-2
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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