1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. onsemi
  6. HGTD1N120BNS

HGTD1N120BNS

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

HGTD1N120BNS Image

The HGTD1N120BNS from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 2.5 V, DC Collector Current 2.7 A, Junction Temperature -55 to 150 Degree C, Gate Emitter Leakage Current -0.25 to 0.25 uA. More details for HGTD1N120BNS can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    HGTD1N120BNS
  • Manufacturer
    onsemi
  • Description
    1200 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    2.5 V
  • DC Collector Current
    2.7 A
  • Junction Temperature
    -55 to 150 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    60 W
  • Package
    DPAK-3 / TO-252-3
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products