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NGTB50N65FL2

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NGTB50N65FL2 Image

The NGTB50N65FL2 from onsemi is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.8 V, DC Collector Current 50 A, DC Forward Current 50 to 100 A, Junction Temperature -55 to 175 Degree C. More details for NGTB50N65FL2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NGTB50N65FL2
  • Manufacturer
    onsemi
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.8 V
  • DC Collector Current
    50 A
  • DC Forward Current
    50 to 100 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.2 to 0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    417 W
  • Package
    TO-247
  • Package Type
    Through Hole
  • Applications
    Solar Inverters, Uninterruptible Power Supplies (UPS), Welding
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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