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NGTD13T65F2

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The NGTD13T65F2 from onsemi is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.6 V, DC Collector Current 30 A, Junction Temperature -55 to 175 Degree C, Collector Emitter Voltage 650 V. More details for NGTD13T65F2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NGTD13T65F2
  • Manufacturer
    onsemi
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.6 V
  • DC Collector Current
    30 A
  • Junction Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    650 V
  • Package
    Die
  • Package Type
    Surface Mount
  • Applications
    Industrial Motor Drives, Solar Inverters, UPS Systems, Welding
  • RoHS Compliant
    Yes

Technical Documents
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