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RBN50H65T1FPQ-A0

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RBN50H65T1FPQ-A0 Image

The RBN50H65T1FPQ-A0 from Renesas is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.5 to 2 V, DC Collector Current 50 to 100 A, Peak Collector Current 200 A, DC Forward Current 50 to 100 A. More details for RBN50H65T1FPQ-A0 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RBN50H65T1FPQ-A0
  • Manufacturer
    Renesas
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.5 to 2 V
  • DC Collector Current
    50 to 100 A
  • Peak Collector Current
    200 A
  • DC Forward Current
    50 to 100 A
  • Peak Forward Current
    200 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    250 W
  • Package
    TO-247A
  • Package Type
    Through Hole
  • Applications
    UPS, Welding, photovoltaic inverters, Power converter system

Technical Documents
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