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RJH60T04DPQ-A1

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RJH60T04DPQ-A1 Image

The RJH60T04DPQ-A1 from Renesas is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.50 to 1.95 V, DC Collector Current 30 to 60 A, Peak Collector Current 180 A, Peak Forward Current 80 A. More details for RJH60T04DPQ-A1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJH60T04DPQ-A1
  • Manufacturer
    Renesas
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.50 to 1.95 V
  • DC Collector Current
    30 to 60 A
  • Peak Collector Current
    180 A
  • Peak Forward Current
    80 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    208.3 W
  • Package
    TO-247A
  • Package Type
    Through Hole
  • Applications
    Current resonance circuit

Technical Documents
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