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RJH65T04BDPM-A0

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RJH65T04BDPM-A0 Image

The RJH65T04BDPM-A0 from Renesas is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.5 V, DC Collector Current 30 to 60 A, Peak Collector Current 120 A, DC Forward Current 50 to 100 A. More details for RJH65T04BDPM-A0 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJH65T04BDPM-A0
  • Manufacturer
    Renesas
  • Description
    650 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.5 V
  • DC Collector Current
    30 to 60 A
  • Peak Collector Current
    120 A
  • DC Forward Current
    50 to 100 A
  • Peak Forward Current
    230 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    -1 to 1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    65 W
  • Package
    TO-3PFP
  • Package Type
    Through Hole
  • RoHS Compliant
    Yes

Technical Documents
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