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RJH65T14DPQ-A0

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RJH65T14DPQ-A0 Image

The RJH65T14DPQ-A0 from Renesas is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.45 to 1.75 V, DC Collector Current 50 to 100 A, Peak Collector Current 180 A, DC Forward Current 20 to 40 A. More details for RJH65T14DPQ-A0 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RJH65T14DPQ-A0
  • Manufacturer
    Renesas
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.45 to 1.75 V
  • DC Collector Current
    50 to 100 A
  • Peak Collector Current
    180 A
  • DC Forward Current
    20 to 40 A
  • Peak Forward Current
    100 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    250 W
  • Package
    TO-247A
  • Package Type
    Through Hole
  • Applications
    Induction Heating Microwave Oven

Technical Documents
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