1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Renesas
  6. RJH65T47DPQ-A0

RJH65T47DPQ-A0

Download Datasheet Request Quote

Note : Your request will be directed to Renesas.

RJH65T47DPQ-A0 Image

The RJH65T47DPQ-A0 from Renesas is a IGBT with Gate Emitter Voltage 30 V, Saturated Collector Emitter Voltage 1.8 to 2.4 V, DC Collector Current 45 to 90 A, Peak Collector Current 335 A, DC Forward Current 15 to 30 A. More details for RJH65T47DPQ-A0 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RJH65T47DPQ-A0
  • Manufacturer
    Renesas
  • Description
    650 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    30 V
  • Saturated Collector Emitter Voltage
    1.8 to 2.4 V
  • DC Collector Current
    45 to 90 A
  • Peak Collector Current
    335 A
  • DC Forward Current
    15 to 30 A
  • Peak Forward Current
    100 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    1 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    375 W
  • Package
    TO-247A
  • Package Type
    Through Hole
  • Applications
    Power Factor Correction circuit

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products