1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Renesas
  6. RJP65S08DWA-80#W0

RJP65S08DWA-80#W0

Download Datasheet Request Quote

Note : Your request will be directed to Renesas.

RJP65S08DWA-80#W0 Image

The RJP65S08DWA-80#W0 from Renesas is an IGBT that is ideal for inverter applications. It has a collector-emitter voltage of up to 650 V, a gate-emitter voltage of ±30 V, and a saturated collector-emitter voltage of 1.5 V. This IGBT has a collector current of up to 400 A and a gate-emitter leakage current of ±1 µA. It has a high switching speed and can withstand short-circuit current surges for over 10 µs. This IGBT is available in a wafer package that measures 10.6 x 10.6 mm.

Product Specifications

View similar products

Product Details

  • Part Number
    RJP65S08DWA-80#W0
  • Manufacturer
    Renesas
  • Description
    650 V High-Speed IGBT for Inverter Applications

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Dimensions
    10.6 x 10.6 mm
  • Saturated Collector Emitter Voltage
    1.5 V
  • DC Collector Current
    400 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    -1 to 1 µA
  • Collector Emitter Voltage
    650 V
  • Package
    Die
  • Package Type
    Wafer
  • Applications
    Inverter
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products