The MG7110WZ from ROHM Semiconductor is a Field Stop Trench IGBT ideal for automotive and industrial use, also suitable for automotive heating applications. It has a collector-emitter breakdown voltage of over 650 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of 1.7 V. This IGBT has a collector current of 75 A and a gate-emitter leakage current of ±200 nA. It utilizes trench light punch-through (LPT) technology and has a short-circuit withstand time of 8 µs to protect against current surges. It is available as a bare die that measures 5.7 x 5.7 mm.