The MG7213WZ from ROHM Semiconductor is a Field Stop Trench IGBT ideal for general inverter and industrial applications. It has a collector-emitter breakdown voltage of over 1200 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of 1.7 V. This IGBT has a collector current of up to 75 A and a gate-emitter leakage current of ±500 nA. It is based on trench light punch-through (LPT) technology and provides a short circuit withstand time of 10 µs in case of current surges. It is available as a bare die that measures 9.2 x 9.2 mm.