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RGCL60TS60

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The RGCL60TS60 from ROHM Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.4 V, DC Collector Current 30 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current -0.2 to 0.2 uA. More details for RGCL60TS60 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGCL60TS60
  • Manufacturer
    ROHM Semiconductor
  • Description
    600 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.4 V
  • DC Collector Current
    30 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.2 to 0.2 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    111 W
  • Package
    TO-247GE
  • Package Type
    Through Hole
  • Applications
    Partial swiching PFC, Discharge circuit, Brake for inverter
  • RoHS Compliant
    Yes

Technical Documents
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