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RGPZ10BM40FH

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RGPZ10BM40FH Image

The RGPZ10BM40FH from ROHM Semiconductor is a IGBT with Gate Emitter Voltage -10 to 10 V, Saturated Collector Emitter Voltage 1.6 V, DC Collector Current 20 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current -15 to 15 uA. More details for RGPZ10BM40FH can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGPZ10BM40FH
  • Manufacturer
    ROHM Semiconductor
  • Description
    430 V, Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -10 to 10 V
  • Saturated Collector Emitter Voltage
    1.6 V
  • DC Collector Current
    20 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -15 to 15 uA
  • Collector Emitter Voltage
    430 V
  • Power Dissipation
    107 W
  • Package
    TO-252
  • Package Type
    Through Hole
  • Applications
    Ignition coil driver circuits, Solenoid driver circuits
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
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