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RGT8NS65D(LPDS)

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RGT8NS65D(LPDS) Image

The RGT8NS65D(LPDS) from ROHM Semiconductor is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 V, DC Collector Current 4 A, DC Forward Current 4 to 7 A, Junction Temperature -40 to 175 Degree C. More details for RGT8NS65D(LPDS) can be seen below.

Product Specifications

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Product Details

  • Part Number
    RGT8NS65D(LPDS)
  • Manufacturer
    ROHM Semiconductor
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 V
  • DC Collector Current
    4 A
  • DC Forward Current
    4 to 7 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.2 to 0.2 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    65 W
  • Package
    LPDS
  • Package Type
    Surface Mount
  • Applications
    General Inverter, UPS, Power Conditioner, Welder
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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