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SK35GD12T4ET

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SK35GD12T4ET Image

The SK35GD12T4ET from Semikron Danfoss is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.85 to 2.45 V, DC Collector Current 44 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current 0.12 uA. More details for SK35GD12T4ET can be seen below.

Product Specifications

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Product Details

  • Part Number
    SK35GD12T4ET
  • Manufacturer
    Semikron Danfoss
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Hex
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.85 to 2.45 V
  • DC Collector Current
    44 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    0.12 uA
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Module

Technical Documents
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