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SK60GAL125

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The SK60GAL125 from Semikron Danfoss is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3.2 to 2.85 V, DC Collector Current 51 A, Junction Temperature -40 to 150 Degree C, Gate Emitter Leakage Current 0.3 uA. More details for SK60GAL125 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SK60GAL125
  • Manufacturer
    Semikron Danfoss
  • Description
    1200 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3.2 to 2.85 V
  • DC Collector Current
    51 A
  • Junction Temperature
    -40 to 150 Degree C
  • Gate Emitter Leakage Current
    0.3 uA
  • Collector Emitter Voltage
    1200 V
  • Package Type
    Module
  • Applications
    Switching, Inverter, UPS

Technical Documents
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