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GD100HFF120C1S

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The GD100HFF120C1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.9 to 2.55 V, DC Collector Current 149 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for GD100HFF120C1S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD100HFF120C1S
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.9 to 2.55 V
  • DC Collector Current
    149 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    511 W
  • Package Type
    Module
  • Applications
    Switching mode power supply, Inductive heating, Electronic welder

Technical Documents
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