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GD100HFX65C1S

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GD100HFX65C1S Image

The GD100HFX65C1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.9 V, DC Collector Current 127 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD100HFX65C1S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD100HFX65C1S
  • Manufacturer
    StarPower
  • Description
    650 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.45 to 1.9 V
  • DC Collector Current
    127 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    319 W
  • Package Type
    Module
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
View details on the manufacturer's website
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