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GD100MLX65L3S

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GD100MLX65L3S Image

The GD100MLX65L3S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.45 to 1.9 V, DC Collector Current 160 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD100MLX65L3S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD100MLX65L3S
  • Manufacturer
    StarPower
  • Description
    650 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Quad
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.45 to 1.9 V
  • DC Collector Current
    160 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    451 W
  • Package Type
    Module
  • Applications
    Solar power, UPS, 3-level-application

Technical Documents
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