GD10PJY120F4S

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The GD10PJY120F4S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 20 A, Junction Temperature -40 to 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD10PJY120F4S can be seen below.

Product Specifications

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Product Details

Part Number
GD10PJY120F4S
Manufacturer
StarPower
Description
1200 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Seven
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.7 to 2.15 V
DC Collector Current

20 A
Junction Temperature

-40 to 150 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1200 V
Power Dissipation

91 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply