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GD1200SGL170C3S

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GD1200SGL170C3S Image

The GD1200SGL170C3S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.5 to 3 V, DC Collector Current 1800 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD1200SGL170C3S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD1200SGL170C3S
  • Manufacturer
    StarPower
  • Description
    1700 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.5 to 3 V
  • DC Collector Current
    1800 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    7810 W
  • Package Type
    Module
  • Applications
    High Power Converters, Motor Drivers, Wind Turbines

Technical Documents
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