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GD150HFU120C6S

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GD150HFU120C6S Image

The GD150HFU120C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.9 to 3.6 V, DC Collector Current 230 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD150HFU120C6S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD150HFU120C6S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.9 to 3.6 V
  • DC Collector Current
    230 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1179 W
  • Package Type
    Module
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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