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GD150HFU120C8S

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GD150HFU120C8S Image

The GD150HFU120C8S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.9 to 3.6 V, DC Collector Current 229 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD150HFU120C8S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD150HFU120C8S
  • Manufacturer
    StarPower
  • Description
    1200 V IGBT Module

General

  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2.9 to 3.6 V
  • DC Collector Current
    229 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1168 W
  • Package Type
    Module
  • Applications
    Switching mode power supply, Inductive heating, Electronic welder

Technical Documents
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