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GD150HFY120C8SN

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GD150HFY120C8SN Image

The GD150HFY120C8SN from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 300 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD150HFY120C8SN can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD150HFY120C8SN
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.15 V
  • DC Collector Current
    300 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1102 W
  • Package Type
    Module
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents
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