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GD1600SGL170C3SN

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GD1600SGL170C3SN Image

The GD1600SGL170C3SN from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 2.5 V, DC Collector Current 3079 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD1600SGL170C3SN can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD1600SGL170C3SN
  • Manufacturer
    StarPower
  • Description
    1700 V Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    2 to 2.5 V
  • DC Collector Current
    3079 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1700 V
  • Power Dissipation
    14150 W
  • Package Type
    Module
  • Applications
    High Power Converters, Motor Drives, AC Inverter Drives

Technical Documents
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