GD200HFL170C2S

IGBT by StarPower (277 more products)

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The GD200HFL170C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2.4 to 2.9 V, DC Collector Current 305 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD200HFL170C2S can be seen below.

Product Specifications

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Product Details

Part Number
GD200HFL170C2S
Manufacturer
StarPower
Description
1700 V IGBT Module

General

No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

2.4 to 2.9 V
DC Collector Current

305 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1700 V
Power Dissipation

1388 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply