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GD200HFU120C2S

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GD200HFU120C2S Image

The GD200HFU120C2S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 3 to 3.8 V, DC Collector Current 262 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD200HFU120C2S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD200HFU120C2S
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    3 to 3.8 V
  • DC Collector Current
    262 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1315 W
  • Package Type
    Module
  • Applications
    Switching mode power supply, Inductive heating, Electronic welder

Technical Documents
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