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GD200HFY120C8S

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GD200HFY120C8S Image

The GD200HFY120C8S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 309 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD200HFY120C8S can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD200HFY120C8S
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Dual
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.15 V
  • DC Collector Current
    309 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.4 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    1006 W
  • Package Type
    Module
  • Applications
    Switching mode power supply, Inductive heating, Electronic welder

Technical Documents
View details on the manufacturer's website
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