GD35PIY120C5SNF

Note : Your request will be directed to StarPower.

GD35PIY120C5SNF Image

The GD35PIY120C5SNF from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.7 to 2.15 V, DC Collector Current 69 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for GD35PIY120C5SNF can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GD35PIY120C5SNF
  • Manufacturer
    StarPower
  • Description
    1200 V Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Seven
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.7 to 2.15 V
  • DC Collector Current
    69 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1200 V
  • Power Dissipation
    263 W
  • Package Type
    Module
  • Applications
    Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply

Technical Documents

Latest IGBTs

View more products