GD400HTY120P4S

IGBT by StarPower (277 more products)

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The GD400HTY120P4S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.5 to 1.95 V, DC Collector Current 400 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD400HTY120P4S can be seen below.

Product Specifications

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Product Details

Part Number
GD400HTY120P4S
Manufacturer
StarPower
Description
1200 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Hex
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.5 to 1.95 V
DC Collector Current

400 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1200 V
Power Dissipation

1500 W
Package Type

Module
Applications

Hybrid and electric vehicle, Inverter for motor drive, Uninterruptible power supply