GD600HFL170C6S

IGBT by StarPower (277 more products)

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The GD600HFL170C6S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 2 to 2.5 V, DC Collector Current 1000 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for GD600HFL170C6S can be seen below.

Product Specifications

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Product Details

Part Number
GD600HFL170C6S
Manufacturer
StarPower
Description
1700 V IGBT Module

General

No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

2 to 2.5 V
DC Collector Current

1000 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.1 uA
Collector Emitter Voltage

1700 V
Power Dissipation

4286 W
Package Type

Module
Applications

Inverter for motor drive, AC and DC servo drive amplifier, Uninterruptible power supply