GD600HFY120C6H

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The GD600HFY120C6H from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.65 to 2 V, DC Collector Current 1100 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD600HFY120C6H can be seen below.

Product Specifications

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Product Details

Part Number
GD600HFY120C6H
Manufacturer
StarPower
Description
1200 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.65 to 2 V
DC Collector Current

1100 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1200 V
Power Dissipation

3947 W
Package Type

Module
Applications

Hybrid and electric vehicle, Inverter for motor drive, Uninterruptible power supply