GD600HTX65P4S

IGBT by StarPower (277 more products)

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The GD600HTX65P4S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.3 to 1.6 V, DC Collector Current 570 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD600HTX65P4S can be seen below.

Product Specifications

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Product Details

Part Number
GD600HTX65P4S
Manufacturer
StarPower
Description
650 V Field Stop Trench IGBT Module

General

Types

Field Stop Trench IGBT
No. of Transistors

Hex
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.3 to 1.6 V
DC Collector Current

570 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

650 V
Power Dissipation

1250 W
Package Type

Module
Applications

Hybrid and electric vehicle, Inverter for motor drive, Uninterruptible power supply