GD650HFL170P1S

IGBT by StarPower (277 more products)

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The GD650HFL170P1S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.95 to 2.4 V, DC Collector Current 890 A, Junction Temperature 150 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD650HFL170P1S can be seen below.

Product Specifications

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Product Details

Part Number
GD650HFL170P1S
Manufacturer
StarPower
Description
1700 V IGBT Module

General

No. of Transistors

Dual
Gate Emitter Voltage

-20 to 20 V
Saturated Collector Emitter Voltage

1.95 to 2.4 V
DC Collector Current

890 A
Junction Temperature

150 Degree C
Gate Emitter Leakage Current

0.4 uA
Collector Emitter Voltage

1700 V
Power Dissipation

3220 W
Package Type

Module
Applications

Auxiliary Inverters, High Power Converters, UPS, Wind and Solar Power, Traction Drives