The GD800HTX65P4S from StarPower is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.3 to 1.6 V, DC Collector Current 700 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.4 uA. More details for GD800HTX65P4S can be seen below.