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STG200M65F2D8AG

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The STG200M65F2D8AG from STMicroelectronics is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.55 V, DC Collector Current 200 A, Junction Temperature -40 to 175 Degree C, Gate Emitter Leakage Current -0.6 to 0.6 uA. More details for STG200M65F2D8AG can be seen below.

Product Specifications

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Product Details

  • Part Number
    STG200M65F2D8AG
  • Manufacturer
    STMicroelectronics
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Dimensions
    9.73 x 10.23 mm
  • Saturated Collector Emitter Voltage
    1.55 V
  • DC Collector Current
    200 A
  • Junction Temperature
    -40 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.6 to 0.6 uA
  • Collector Emitter Voltage
    650 V
  • Package
    Die
  • Package Type
    Surface Mount
  • Applications
    Traction inverter for EV/HEV
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
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