The STGB19N40LZ from STMicroelectronics is a IGBT with Gate Emitter Voltage 12 to 16 V, Saturated Collector Emitter Voltage 1.35 to 1.85 V, DC Collector Current 25 A, Gate Emitter Leakage Current 450 to 830 uA, Operating Temperature -55 to 175 Degree C. More details for STGB19N40LZ can be seen below.