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STGB20NB41LZ

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STGB20NB41LZ Image

The STGB20NB41LZ from STMicroelectronics is a IGBT with Gate Emitter Voltage 12 to 16 V, Saturated Collector Emitter Voltage 1.1 to 2 V, DC Collector Current 20 to 40 A, Gate Emitter Leakage Current 300 to 1000 uA, Operating Temperature -55 to 175 Degree C. More details for STGB20NB41LZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    STGB20NB41LZ
  • Manufacturer
    STMicroelectronics
  • Description
    382 to 442 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    12 to 16 V
  • Saturated Collector Emitter Voltage
    1.1 to 2 V
  • DC Collector Current
    20 to 40 A
  • Gate Emitter Leakage Current
    300 to 1000 uA
  • Operating Temperature
    -55 to 175 Degree C
  • Collector Emitter Voltage
    382 to 442 V
  • Power Dissipation
    200 W
  • Package
    D2PAK
  • Package Type
    Surface Mount
  • Applications
    AUTOMOTIVE IGNITION

Technical Documents
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