1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. STMicroelectronics
  6. STGSB200M65DF2AG

STGSB200M65DF2AG

Download Datasheet Request Quote

Note : Your request will be directed to STMicroelectronics.

STGSB200M65DF2AG Image

The STGSB200M65DF2AG from STMicroelectronics is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.65 V, DC Collector Current 200 to 216 A, DC Forward Current 138 A, Junction Temperature -55 to 175 Degree C. More details for STGSB200M65DF2AG can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    STGSB200M65DF2AG
  • Manufacturer
    STMicroelectronics
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.65 V
  • DC Collector Current
    200 to 216 A
  • DC Forward Current
    138 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.6 to 0.6 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    714 W
  • Package
    ACEPACK SMIT
  • Package Type
    Surface Mount
  • Applications
    Traction inverter
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products