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STGW80H65DFB-4

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STGW80H65DFB-4 Image

The STGW80H65DFB-4 from STMicroelectronics is a IGBT with Gate Emitter Voltage -30 to 30 V, Saturated Collector Emitter Voltage 1.6 V, DC Collector Current 80 to 120 A, DC Forward Current 80 to 120 A, Junction Temperature -55 to 175 Degree C. More details for STGW80H65DFB-4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STGW80H65DFB-4
  • Manufacturer
    STMicroelectronics
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -30 to 30 V
  • Saturated Collector Emitter Voltage
    1.6 V
  • DC Collector Current
    80 to 120 A
  • DC Forward Current
    80 to 120 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    469 W
  • Package
    TO247-4
  • Package Type
    Through Hole
  • Applications
    Photovoltaic inverters, High frequency converters
  • RoHS Compliant
    Yes

Technical Documents
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