1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. STMicroelectronics
  6. STGYA120M65DF2

STGYA120M65DF2

Download Datasheet Request Quote

Note : Your request will be directed to STMicroelectronics.

STGYA120M65DF2 Image

The STGYA120M65DF2 from STMicroelectronics is a IGBT with Gate Emitter Voltage -20 to 20 V, Saturated Collector Emitter Voltage 1.65 V, DC Collector Current 120 to 160 A, DC Forward Current 120 to 160 A, Junction Temperature -55 to 175 Degree C. More details for STGYA120M65DF2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    STGYA120M65DF2
  • Manufacturer
    STMicroelectronics
  • Description
    650 V, Field Stop Trench IGBT Module

General

  • Types
    Field Stop Trench IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    -20 to 20 V
  • Saturated Collector Emitter Voltage
    1.65 V
  • DC Collector Current
    120 to 160 A
  • DC Forward Current
    120 to 160 A
  • Junction Temperature
    -55 to 175 Degree C
  • Gate Emitter Leakage Current
    -0.25 to 0.25 uA
  • Collector Emitter Voltage
    650 V
  • Power Dissipation
    625 W
  • Package
    Max247 long leads
  • Package Type
    Through Hole
  • Applications
    Motor control, UPS, PFC, General purpose inverter
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products