GT20J341

Note : Your request will be directed to Toshiba.

GT20J341 Image

The GT20J341 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.5 to 2 V, DC Collector Current 11 to 20 A, DC Forward Current 9 to 20 A, Junction Temperature 150 Degree C. More details for GT20J341 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GT20J341
  • Manufacturer
    Toshiba
  • Description
    600 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.5 to 2 V
  • DC Collector Current
    11 to 20 A
  • DC Forward Current
    9 to 20 A
  • Junction Temperature
    150 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    600 V
  • Power Dissipation
    45 W
  • Package
    TO-220SIS
  • Package Type
    Through Hole
  • Applications
    Motor Drivers
  • RoHS Compliant
    Yes

Technical Documents

Latest IGBTs

View more products