1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. IGBTs
  5. Toshiba
  6. GT30J110SRA

GT30J110SRA

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

GT30J110SRA Image

The GT30J110SRA from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.60 to 2.50 V, DC Collector Current 30 to 60 A, DC Forward Current 30 to 60 A, Junction Temperature 175 Degree C. More details for GT30J110SRA can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GT30J110SRA
  • Manufacturer
    Toshiba
  • Description
    1100 V ,Single Switch IGBT Module

General

  • Types
    Single Switch IGBT
  • No. of Transistors
    Single
  • Gate Emitter Voltage
    25 V
  • Saturated Collector Emitter Voltage
    1.60 to 2.50 V
  • DC Collector Current
    30 to 60 A
  • DC Forward Current
    30 to 60 A
  • Junction Temperature
    175 Degree C
  • Gate Emitter Leakage Current
    0.1 uA
  • Collector Emitter Voltage
    1100 V
  • Power Dissipation
    312 W
  • Package
    TO-3P(N)
  • Package Type
    Through Hole
  • Applications
    Dedicated to Voltage-Resonant Inverter Switching Applications, Dedicated to Soft Switching Applications, Dedicated to Induction Cooktops and Home Appliance Applications
  • RoHS Compliant
    Yes

Technical Documents
View details on the manufacturer's website
View similar products

Latest IGBTs

View more products