Note : Your request will be directed to Toshiba.
The GT40J322 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.7 to 2.7 V, DC Collector Current 40 A, DC Forward Current 30 A, Junction Temperature 150 Degree C. More details for GT40J322 can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
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