Note : Your request will be directed to Toshiba.
The GT40WR21 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 2.9 to 5.9 V, DC Collector Current 40 A, DC Forward Current 20 A, Junction Temperature 175 Degree C. More details for GT40WR21 can be seen below.
650 V Insulated Gate Bipolar Transistor
1200 V IGBT Power Module
650 V Field-Stop Trench IGBT
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