GT50J123

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The GT50J123 from Toshiba is a IGBT with Gate Emitter Voltage 25 V, Saturated Collector Emitter Voltage 1.9 to 2.5 V, DC Collector Current 33 to 59 A, Junction Temperature 175 Degree C, Gate Emitter Leakage Current 0.1 uA. More details for GT50J123 can be seen below.

Product Specifications

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Product Details

Part Number
GT50J123
Manufacturer
Toshiba
Description
600 V ,Single Switch IGBT Module

General

Types

Single Switch IGBT
No. of Transistors

Single
Gate Emitter Voltage

25 V
Saturated Collector Emitter Voltage

1.9 to 2.5 V
DC Collector Current

33 to 59 A
Junction Temperature

175 Degree C
Gate Emitter Leakage Current

0.1 uA
Collector Emitter Voltage

600 V
Power Dissipation

230 W
Package

TO-3P(N)
Package Type

Through Hole
Applications

Hard Switching, High-Speed Switching, Power Factor Correction (PFC)
RoHS Compliant

Yes